Journal: Scientific Reports

Article Title: Tunable Wide-Angle Tunneling in Graphene-Assisted Frustrated Total Internal Reflection

doi: 10.1038/srep19975

Figure Lengend Snippet: ( a ) Schematic diagram of the modulator in which one of the semi-infinite high-index (Si) media in the GA-FTIR structure is replaced by a 400-nm-thick single-mode slab waveguide, the two graphene layers are separated by a 10-nm-thick SiO 2 layer, and a semi-infinite Si layer at the bottom serves as a leaky channel. The red arrow indicates the light input. ( b,c ) Electric field distributions obtained from 2D FEM simulation of the device in the on-state ( E F = 0.9 eV) and the off-state ( E F = 0.97 eV), respectively, at λ = 951 nm. ( d ) Electric field distribution from 2D FEM simulation of the device, with the graphene/SiO 2 /graphene channel removed, as shown in the inset. The 2D wave propagations in ( c,d ) are almost identical. This demonstrates the abnormal wide-angle transparency of the proposed structure, even in the presence of ohmic loss in graphene.

Article Snippet: The proposed modulator has a 400-nm-thick Si layer that acts as a single-mode slab waveguide, two graphene layers separated by a 10-nm-thick SiO 2 layer, and a semi-infinite Si medium on the bottom. shows a two-dimensional (2D) finite-element method (FEM) simulation, performed using COMSOL, of TM wave propagation in the proposed structure, with E F = 0.9 eV and an operating wavelength of 951 nm.

Techniques: